Enhanced electronic transport properties of Te roll-like nanostructures

• E. R. Viana,
• N. Cifuentes and
• J. C. González

Beilstein J. Nanotechnol. 2022, 13, 1284–1291, doi:10.3762/bjnano.13.106

• electrical properties of these nanostructures, with a small disorder, and superior quality for nanodevice applications. Keywords: electrical characterization; field-effect transistors; hopping conduction; nanobelts; tellurium; Introduction The chalcogen tellurium (Te) is a rare element (0.002 ppm) in the

Impact of device design on the electronic and optoelectronic properties of integrated Ru-terpyridine complexes

• Max Mennicken,
• Sophia Katharina Peter,
• Corinna Kaulen,
• Ulrich Simon and
• Silvia Karthäuser

Beilstein J. Nanotechnol. 2022, 13, 219–229, doi:10.3762/bjnano.13.16

• mechanism, that is, thermally activated hopping conduction in the case of Ru-terpyridine wire devices or sequential tunneling in nanoparticle-based devices. Furthermore, the conductance switching of nanoparticle-based devices upon 530 nm irradiation was attributed to plasmon-induced metal-to-ligand charge

• -complex wire device. In this case the linear regression reveals an activation energy of EA = 582 meV. Over all eight samples, energies ranged from 367 to 584 meV with a median of 479 meV. Thus, it is reasonable to assume thermally activated hopping conduction for these solid-state devices, as it had been

• ligands. In subsequent steps, the electrons might hop from a pyridine (phenyl) group to another pyridine (phenyl) group or to oxidized metallic cores (Ru3+). Most interestingly, the lower limit of the activation energy determined for hopping conduction through the Ru(TP)2-complex wire device corresponds

Effect of channel length on the electrical response of carbon nanotube field-effect transistors to deoxyribonucleic acid hybridization

• Hari Krishna Salila Vijayalal Mohan,
• Jianing An,
• Yani Zhang,
• Chee How Wong and
• Lianxi Zheng

Beilstein J. Nanotechnol. 2014, 5, 2081–2091, doi:10.3762/bjnano.5.217

• contribution of each mechanism for different L, thereby resulting in the observed trend with L. These mechanisms include the effect of electron transfer, CNT contact work function modulation, DNA–DNA duplex affinity on the SWCNT, hopping conduction, etc. on the response [27][28][33]. Therefore, it is necessary